C8051F327-GM Silicon Laboratories Inc, C8051F327-GM Datasheet - Page 64

IC 8051 MCU FLASH 16K 28QFN

C8051F327-GM

Manufacturer Part Number
C8051F327-GM
Description
IC 8051 MCU FLASH 16K 28QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F32xr
Datasheets

Specifications of C8051F327-GM

Program Memory Type
FLASH
Program Memory Size
16KB (16K x 8)
Package / Case
28-QFN
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
UART/USART, USB
Peripherals
POR
Number Of I /o
15
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
1.5 KB
Interface Type
UART/USB
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
15
Number Of Timers
2
Operating Supply Voltage
2.7 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F326DK
Minimum Operating Temperature
- 40 C
Package
28QFN EP
Device Core
8051
Family Name
C8051F327
Maximum Speed
25 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
336-1481 - DAUGHTER CARD TOOLSTCK C8051F327770-1006 - ISP 4PORT FOR SILABS C8051F MCU
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1297-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C8051F327-GM
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
C8051F326/7
8.1.3. Flash Write Procedure
Flash bytes are programmed by software with the following sequence:
Steps 3-8 must be repeated for each byte to be written. After Flash writes are complete, PSWE should be
cleared so that MOVX instructions do not target program memory.
Table 8.1. Flash Electrical Characteristics
64
*Note: 512 bytes at location 0x3E00 to 0x3FFF are reserved.
Erase Cycle Time
Write Cycle Time
Parameter
Endurance
Flash Size
Step 1. Disable interrupts (recommended).
Step 2. Erase the 512-byte Flash page containing the target location, as described in
Step 3. Write the first key code to FLKEY: 0xA5.
Step 4. Write the second key code to FLKEY: 0xF1.
Step 5. Set the PSWE bit (register PSCTL).
Step 6. Clear the PSEE bit (register PSCTL).
Step 7. Using the MOVX instruction, write a single data byte to the desired location within the 512-
Step 8. Clear the PSWE bit (register PSCTL).
Section “8.1.2. Flash Erase Procedure” on page 63.
byte sector.
25 MHz System Clock
25 MHz System Clock
C8051F326/7
Conditions
Rev. 1.1
16384*
Min
20k
10
40
100k
Typ
15
55
Max
20
70
Erase/Write
Units
bytes
ms
µs

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