F272-BAG-T-TR STMicroelectronics, F272-BAG-T-TR Datasheet - Page 45

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F272-BAG-T-TR

Manufacturer Part Number
F272-BAG-T-TR
Description
MCU 16BIT 256K FLASH 144-TQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of F272-BAG-T-TR

Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-TQFP, 144-VQFP
Processor Series
ST10F27x
Core
ST10
Data Bus Width
16 bit
Data Ram Size
12 KB
Interface Type
ASC, CAN, I2C, SSC
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
111
Number Of Timers
4
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 24 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
F272-BAG-T-TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
F272-BAG-T-TR
Manufacturer:
ST
0
ST10F272B/ST10F272E
5.7
Write operation summary
In general, each write operation is started through a sequence of 3 steps:
1.
2.
3.
Once selected, but not yet started, one operation can be canceled by resetting the operation
selection bit.
A summary of the available Flash Module Write Operations are shown in the following
Table
Table 24.
Word Program (32-bit)
Double Word Program (64-bit)
Sector Erase
Set Protection
Program/Erase Suspend
The first instruction is used to select the desired operation by setting its corresponding
selection bit in the Flash Control Register 0.
The second step is the definition of the Address and Data for programming or the
Sectors or Banks to erase.
The last instruction is used to start the write operation, by setting the start bit WMS in
the FCR0.
24.
Operation
Flash write operations
Select bit
DWPG
SUSP
WPG
SER
SPR
Address and data
FDR0L/FDR0H
FDR0L/FDR0H
FDR1L/FDR1H
FCR1L/FCR1H
FDR0L/FDR0H
FARL/FARH
FARL/FARH
None
Internal Flash memory
Start bit
WMS
WMS
WMS
WMS
None
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