ST10F272M-4T3 STMicroelectronics, ST10F272M-4T3 Datasheet - Page 30

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ST10F272M-4T3

Manufacturer Part Number
ST10F272M-4T3
Description
MCU 16BIT 256K FLASH 144-LQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of ST10F272M-4T3

Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-MQFP, 144-PQFP
Processor Series
ST10F27x
Core
ST10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

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Part Number:
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Internal Flash memory
30/176
Table 8.
Bit Name
14 SUSP
13
12 DWPG
11
8
WPG
SER
SPR
Suspend
This bit must be set to suspend the current program (word or double word) or sector
erase operation in order to read data in one of the sectors of the bank under
modification or to program data in another bank. The suspend operation resets the
Flash bank to normal read mode (automatically resetting bit BSY0). When in program
suspend, the Flash module accepts only the following operations: Read and program
resume. when in erase suspend the module accepts only the following operations: read,
erase resume and program (word or double word; program operations cannot be
suspended during erase suspend). To resume a suspended operation, the WMS bit
must be set again, together with the selection bit corresponding to the operation to
resume (WPG, DWPG, SER).
Note: It is forbidden to start a new write operation with bit SUSP already set.
Word program
This bit must be set to select the word (32 bits) program operation in the Flash module.
The word program operation can be used to program 0s in place of 1s. The Flash
address to be programmed must be written in the FARH/L registers, while the Flash
data to be programmed must be written in the FDR0H/L registers before starting the
execution by setting bit WMS. WPG bit is automatically reset at the end of the word
program operation.
Double word program
This bit must be set to select the double word (64 bits) program operation in the Flash
module. The double word program operation can be used to program 0s in place of 1s.
The Flash address in which to program (aligned with even words) must be written in the
FARH/L registers, while the two Flash data words to be programmed must be written in
the FDR0H/L registers (even word) and FDR1H/L registers (odd word) before starting
the execution by setting bit WMS. DWPG bit is automatically reset at the end of the
double word program operation.
Sector erase
This bit must be set to select the sector erase operation in the Flash modules. The
sector erase operation can be used to erase all the Flash locations to value 0xFF. From
1 to all the sectors of the same bank (excluded test-Flash for bank B0) can be selected
to be erased through bits BxFy of FCR1H/L registers before starting the execution by
setting bit WMS. It is not necessary to preprogram the sectors to 0x00, because this is
done automatically. SER bit is automatically reset at the end of the sector erase
operation.
Set protection
This bit must be set to select the set protection operation. The set protection operation
can be used to program 0s in place of 1s in the Flash non-volatile protection registers.
The Flash address in which to program must be written in the FARH/L registers, while
the Flash data to be programmed must be written in the FDR0H/L before starting the
execution by setting bit WMS. A sequence error is flagged by bit SEQER of FER if the
address written in FARH/L is not in the range of 0x0E8FB0 to 0x08DFBF. SPR bit is
automatically reset at the end of the set protection operation.
Flash control register 0 high (continued)
Function
ST10F272M

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