HD64F3672FPIV Renesas Electronics America, HD64F3672FPIV Datasheet - Page 267

• Manufacturer Part Number: HD64F3672FPIV
• Description: MCU 3/5V 16K I-TEMP PB-FREE 64-L
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300H Tinyr

Specifications of HD64F3672FPIV

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI
• Peripherals: PWM, WDT
• Number Of I /o: 26
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• For Use With: R0K436079S000BE - KIT DEV FOR H8/36079 W/COMPILER
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Notes: 1. Make the time settings in accordance with the program/erase algorithms.
Item
Erase
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
3. The time required to erase one block. (Indicates the time for which the E bit in flash
4. Programming time maximum value (t
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
6. Erase time maximum value (t
7. Set the maximum maximum erase count (N) according to the actual set value of (z), so
Programming count (n)
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
maximum programming count (N)
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
count (N)
that it does not exceed the erase time maximum value (t
Wait time after SWE
bit setting*
Wait time after ESU
bit setting*
Wait time after E bit
setting*
Wait time after E bit clear*
Wait time after ESU
bit clear*
Wait time after EV
bit setting*
Wait time after
dummy write*
Wait time after EV bit clear*
Wait time after SWE
bit clear*
Maximum erase count*
1
7
n
n
1
*
1
1
6
6
1000
1
1
1
1
z1 = 30 µs
z2 = 200 µs
1
*
6
*
1
7
1
E
(max)) = wait time after E bit setting (z)
Symbol Condition
x
y
z
N
P
(MAX)) = wait time after P bit setting (z)
Test
Rev.4.00 Nov. 02, 2005 Page 241 of 304
Min
1
100
10
10
10
20
2
4
100
—
Section 17 Electrical Characteristics
E
(max)).
Typ
—
—
—
—
—
—
—
—
—
—
Values
Max
—
—
100
—
—
—
—
—
—
120
REJ09B0143-0400
maximum erase
P
(MAX)).
Unit
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times