R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 256

• Manufacturer Part Number: R4F24268NVRFQV
• Description: MCU 256KB FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24268NVRFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
Section 6 Bus Controller (BSC)
When DRAM space is accessed, the RD signal is output as the OE signal for DRAM. When
connecting DRAM provided with an EDO page mode, the OE signal should be connected to the
(OE) pin of the DRAM. Setting the OEE bit to 1 in DRAMCR enables the OE signal for DRAM
space to be output from a dedicated OE pin. In this case, the OE signal for DRAM space is output
from both the RD pin and the (OE) pin, but in external read cycles for other than DRAM space,
the signal is output only from the RD pin.
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REJ09B0466-0350 Rev. 3.50
Jul 09, 2010