R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 320
R4F24268NVRFQV
Manufacturer Part Number
R4F24268NVRFQV
Description
MCU 256KB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet
1.R4F24268NVZFQV.pdf
(1406 pages)
Specifications of R4F24268NVRFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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R4F24268NVRFQV
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Section 6 Bus Controller (BSC)
(6)
In a continuous synchronous DRAM space access following a normal space access, the settings of
bits ICIS2, ICIS1, ICIS0, and IDLC in BCR are valid. However, in the case of consecutive reads
in different areas, for example, if the second read is a full access to continuous synchronous
DRAM space, only Tp cycle is inserted, and Ti cycle is not. The timing in this case is shown in
figure 6.84.
Note: The synchronous DRAM interface is not supported by the H8S/2426 Group and H8S/2424
Page 290 of 1372
Idle Cycle in Case of Continuous Synchronous DRAM Space Access after Normal
Space Access
Figure 6.84 Example of Synchronous DRAM Full Access after External Read
Group.
Precharge-sel
DQMU, DQML
Address bus
Data bus
CKE
CAS
RAS
WE
RD
φ
External space read
T
1
NOP
T
(CAS Latency 2)
2
T
3
PALL ACTV
Column
address
T
Synchronous DRAM space read
p
address
address
Row
Row
T
r
READ
T
c1
Column address
H8S/2426, H8S/2426R, H8S/2424 Group
T
cl
NOP
REJ09B0466-0350 Rev. 3.50
T
c2
Jul 09, 2010
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