DSPIC30F2010-30I/SO Microchip Technology, DSPIC30F2010-30I/SO Datasheet - Page 40

• Manufacturer Part Number: DSPIC30F2010-30I/SO
• Description: IC DSPIC MCU/DSP 12K 28SOIC
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F2010-30I/SO

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
• Number Of I /o: 20
• Program Memory Size: 12KB (4K x 24)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 20
• Flash Memory Size: 12KB
• Supply Voltage Range: 2.5V To 5.5V
• Package: 28SOIC W
• Device Core: dsPIC
• Family Name: dsPIC30
• Maximum Speed: 30 MHz
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 16 Bit
• Number Of Programmable I/os: 20
• Interface Type: I2C/SPI/UART
• On-chip Adc: 6-chx10-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification

11.6
The procedure for erasing program memory (all code
memory and data memory) in low-voltage systems
(with V
different than the procedure for erasing program
memory in normal-voltage systems. Instead of using a
Bulk Erase operation, each region of memory must be
individually erased by row. Namely, all of the code
memory, executive memory and data memory must be
erased one row at a time. This procedure is detailed in
Table
TABLE 11-5:
DS70102K-page 40
Step 1: Exit the Reset vector.
0000
0000
0000
Step 2: Initialize NVMADR and NVMADRU to erase code memory and initialize W7 for row address updates.
0000
0000
0000
0000
Step 3: Set NVMCON to erase 1 row of code memory.
0000
0000
Step 4: Unlock the NVMCON to erase 1 row of code memory.
0000
0000
0000
0000
Step 5: Initiate the erase cycle.
0000
0000
0000
—
0000
0000
0000
0000
0000
Command
(Binary)
11-5.
DD
Erasing Program Memory in
Low-Voltage Systems
between 2.5 volts and 4.5 volts) is quite
040100
040100
000000
EB0300
883B16
883B26
200407
24071A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
—
000000
000000
A9E761
000000
000000
(Hexadecimal)
SERIAL INSTRUCTION EXECUTION FOR ERASING PROGRAM MEMORY
(EITHER IN LOW-VOLTAGE OR NORMAL-VOLTAGE SYSTEMS)
Data
GOTO 0x100
GOTO 0x100
NOP
CLR
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #WR
NOP
NOP
Externally time ‘P13a’ ms (see
Timing
NOP
NOP
BCLR NVMCON, #WR
NOP
NOP
Requirements”)
W6
W6, NVMADR
W6, NVMADRU
#0x40, W7
#0x4071, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
Due to security restrictions, the FBS, FSS and FGS
register cannot be erased in low-voltage systems.
Once any bits in the FGS register are programmed to
‘0’, they can only be set back to ‘1’ by performing a Bulk
Erase in a normal-voltage system. Alternatively, a Seg-
ment Erase operation can be performed instead of a
Bulk Erase.
Normal-voltage systems can also be used to erase
program memory as shown in
since this method is more time-consuming and does
not clear the code-protect bits, it is not recommended.
Note:
Description
Section 13.0 “AC/DC Characteristics and
Program memory must be erased before
writing any data to program memory.
© 2010 Microchip Technology Inc.
Table
11-5. However,