FDMA7630 Fairchild Semiconductor, FDMA7630 Datasheet - Page 2

• Manufacturer Part Number: FDMA7630
• Description: MOSFET N-CH 30V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA7630

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1360pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Forward Transconductance Gfs (max / Min): 36 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA7630TR

©2010 Fairchild Semiconductor Corporation
FDMA7630 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
I
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
the user's board design.
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 52 °C/W when mounted
on a 1 in
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25 °C unless otherwise noted
2
pad of 2 oz copper.
V
I
V
V
V
V
V
f = 1.0 MHz
V
I
V
V
V
V
I
I
V
V
F
D
D
D
GS
DD
GS
GS
GS
DS
GS
GS
GS
GS
DS
DS
GS
= 11 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
= 0 V, I
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
DS
2
Test Conditions
, I
S
D
D
= 2 A
D
D
D
GS
GEN
GS
D
= 11 A
GS
= 11 A
DS
= 250 μA
= 11 A
= 11 A, T
= 9 A
= 0 V
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
J
= 11 A
= 125 °C
= 15 V,
(Note 2)
b. 145 °C/W when mounted on a
θJC
minimum pad of 2 oz copper.
is guaranteed by design while R
Min
1.0
30
1020
315
Typ
0.8
2.0
1.7
35
3.0
2.2
21
–6
10
14
14
36
19
16
15
6
8
3
3
8
1360
Max
415
100
3.0
1.2
θCA
13
20
18
33
12
55
15
10
34
10
22
10
2
1
www.fairchildsemi.com
is determined by
mV/°C
mV/°C
Units
mΩ
pF
pF
pF
nC
μA
nC
nC
nC
nC
ns
nA
ns
ns
ns
ns
Ω
V
S
A
V
V