FDMA7630 Fairchild Semiconductor, FDMA7630 Datasheet - Page 5

• Manufacturer Part Number: FDMA7630
• Description: MOSFET N-CH 30V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA7630

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1360pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13 mOhms
• Forward Transconductance Gfs (max / Min): 36 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA7630TR

©2010 Fairchild Semiconductor Corporation
FDMA7630 Rev.C
Dimensional Outline and Pad Layout
A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
D. DRAWING FILENAME: MKT-MLP06Lrev2.
MO-229 DATED AUG/2003
ASME Y14.5M, 1994
PIN#1 LOCATION
PIN #1 IDENT
0.8 MAX
0.08 C
0.10 C
2X
PLANE
SEATING
0.33
0.20
0.10 C
0.05
0.00
0.65
6
1
1.000
0.800
1.30
2.000
3
4
0.25~0.35
(0.56)
(0.30)
2.000
0.10
0.05
(0.20)
2X
C
1.05
0.95
0.10 C
C A B
C
5
RECOMMENDED LAND PATTERN OPT 1
RECOMMENDED LAND PATTERN OPT 2
(0.47)
0.65 TYP
(0.47)
0.65 TYP
1.05
1.05
1
6
1
1.00
6
1.00
4
3
4
3
0.66
0.40 TYP
0.66
0.40 TYP
1.35
NO DRAIN OR GATE
TRACES ALLOWED IN
THIS AREA
1.35
2.30
2.30
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