FDMS7682 Fairchild Semiconductor, FDMS7682 Datasheet - Page 4

• Manufacturer Part Number: FDMS7682
• Description: MOSFET N-CH 30V 22A POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7682

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1885pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.3 mOhms
• Forward Transconductance Gfs (max / Min): 70 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS7682TR

FDMS7682 Rev.C
Typical Characteristics
0.01
100
0.1
10
10
30
10
Figure 7.
1
8
6
4
2
0
1
0.01
0.01
0
I
Figure 9.
D
Figure 11. Forward Bias Safe
THIS AREA IS
LIMITED BY r
= 14 A
4
V
Switching Capability
V
DS
Gate Charge Characteristics
0.1
DD
0.1
t
, DRAIN to SOURCE VOLTAGE (V)
AV
Operating Area
Unclamped Inductive
SINGLE PULSE
T
R
T
= 10 V
, TIME IN AVALANCHE (ms)
J
A
θ
Q
DS(on)
JA
= MAX RATED
= 25
g
8
, GATE CHARGE (nC)
V
T
= 125
J
DD
= 125
o
C
= 15 V
o
1
T
C/W
12
J
1
o
= 25
C
T
V
J
o
DD
C
= 25 °C unless otherwise noted
= 20 V
16
T
J
10
= 100
10
o
C
20
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
100200
100
24
4
4000
1000
500
100
100
0.5
10
60
45
30
15
10
1
0
Figure 10.
10
0.1
25
Figure 12.
-4
Limited by Package
f = 1 MHz
V
Figure 8.
V
Current vs Case Temperature
GS
GS
10
= 0 V
= 4.5 V
V
-3
V
DS
50
GS
, DRAIN TO SOURCE VOLTAGE (V)
Power Dissipation
Maximum Continuous Drain
to Source Voltage
T
= 10 V
C
10
Single Pulse Maximum
,
Capacitance vs Drain
CASE TEMPERATURE (
-2
t, PULSE WIDTH (sec)
V
GS
75
= 10 V
1
10
-1
R
θ
JC
= 3.7
1
100
o
C/W
SINGLE PULSE
R
T
10
A
θ
o
JA
C )
= 25
125
= 125
10
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o
100
C
C
C
C
iss
oss
rss
o
C/W
1000
150
30