FF1N30HS60DD Fairchild Semiconductor, FF1N30HS60DD Datasheet
FF1N30HS60DD
Specifications of FF1N30HS60DD
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FF1N30HS60DD Summary of contents
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... FF1N30HS60DD 30A, 600V Stealth™ Diode General Description The FF1N30HS60DD is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft recovery under typical RM(REC) operating conditions. ...
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... Package Marking and Ordering Information Device Marking Device FF1N30HS60DD FF1N30HS60DD Electrical Characteristics Symbol Parameter Off State Characteristics I Instantaneous Reverse Current R On State Characteristics V Instantaneous Forward Voltage F Dynamic Characteristics C Junction Capacitance J Switching Characteristics t Reverse Recovery Time rr t Reverse Recovery Time rr I Maximum Reverse Recovery Current ...
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... Figure 3. t and t Curves vs Forward Current 390V 125 FORWARD CURRENT (A) F Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2003 Fairchild Semiconductor Corporation 5000 o C 1000 100 10 o 100 C 1 0.1 2.0 2.5 3.0 100 Figure 2. Reverse Current vs Reverse Voltage 120 V R 100 ...
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... Figure 9. Junction Capacitance vs Reverse Voltage 2.0 DUTY CYCLE - DESCENDING ORDER 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE 0.001 - Figure 11. Normalized Maximum Transient Thermal Impedance ©2003 Fairchild Semiconductor Corporation 1200 390V 125 1000 800 600 400 200 1200 1400 1600 200 Figure 8 ...
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... Figure 12. t Test Circuit 40mH R < 0 50V 1/2LI [V /( AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT Figure 14. Avalanche Energy Test Circuit ©2003 Fairchild Semiconductor Corporation I F DUT CURRENT 0 SENSE + Figure 13 Figure 15. Avalanche Current and Voltage 0. Waveforms and Definitions ...
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