FF1N30HS60DD Fairchild Semiconductor, FF1N30HS60DD Datasheet - Page 3

• Manufacturer Part Number: FF1N30HS60DD
• Description: DIODE STEALTH 600V 30A SOT227
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of FF1N30HS60DD

• Voltage - Forward (vf) (max) @ If: 2.4V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 45ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 5. Maximum Reverse Recovery Current vs
Figure 1. Forward Current vs Forward Voltage
Figure 3. t
100
20
18
16
14
12
10
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
8
6
4
0
0
0
0
0
V
t
V
b
R
R
AT dI
= 390V, T
= 390V, T
a
F
10
10
0.5
/dt = 200A/µs, 500A/µs, 800A/µs
and t
J
J
t
Forward Current
= 125
a
= 125
AT dI
I
I
V
F
F
, FORWARD CURRENT (A)
b
F
, FORWARD CURRENT (A)
20
, FORWARD VOLTAGE (V)
20
1.0
o
Curves vs Forward Current
o
C
F
C
125
/dt = 200A/µs, 500A/µs, 800A/µs
150
o
C
o
C
30
1.5
30
175
o
100
C
2.0
40
40
o
C
dI
dI
dI
F
F
F
/dt = 800A/µs
/dt = 500A/µs
/dt = 200A/µs
2.5
50
50
25
o
C
3.0
60
60
Figure 6. Maximum Reverse Recovery Current vs
Figure 2. Reverse Current vs Reverse Voltage
5000
1000
100
120
100
0.1
10
80
60
40
20
30
25
20
15
10
1
0
200
5
0
200
100
Figure 4. t
V
V
t
a
R
R
AT I
= 390V, T
= 390V, T
400
400
F
dI
dI
= 60A, 30A, 15A
200
F
F
/dt, CURRENT RATE OF CHANGE (A/µs)
/dt, CURRENT RATE OF CHANGE (A/µs)
t
b
J
J
I
AT I
F
600
= 125
= 125
600
a
= 30A
V
R
F
and t
, REVERSE VOLTAGE (V)
= 60A, 30A, 15A
o
o
C
C
dI
300
800
800
F
b
/dt
150
125
100
175
75
25
Curves vs dI
o
o
o
o
o
o
C
C
C
C
C
1000
C
1000
400
I
F
I
F
1200
1200
= 60A
= 15A
FFH1N30HS60DD RevA
500
F
/dt
1400
1400
1600
1600
600