FMS6G15US60 Fairchild Semiconductor, FMS6G15US60 Datasheet - Page 89

• Manufacturer Part Number: FMS6G15US60
• Description: IGBT 600V 15A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS6G15US60

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.935nF @ 30V
• Power - Max: 73W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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Bipolar Power Transistors – General Purpose Transistors (Continued)
KSE172
MJE172
BD434
BD436
BD438
BD440
BD442
KSE210
MJE210
KSB1151
TO-220 NPN Configuration
KSC1507
TIP29
TIP29A
TIP29C
TIP47
TIP48
KSC2073
TIP50
KSC2073
KSE13003T
BD239
BD239A
BD239B
BD239C
KSD401
KSC1173
TIP31
BD241
KSD288
BD241A
TIP31A
KSD880
KSD1943
BD241B
Products
I
C
0.2
1.5
1.5
3
3
4
4
4
4
4
5
5
5
1
1
1
1
1
1
1
2
2
2
2
2
3
3
3
3
3
3
3
3
3
(A) V
CEO
300
100
250
300
350
400
150
400
100
150
80
80
22
32
45
60
80
25
25
60
40
60
45
60
80
30
40
45
55
60
60
60
60
80
(V) V
CBO
100
100
300
100
350
400
450
500
150
700
115
200
22
32
45
60
80
40
40
60
40
60
55
70
90
30
40
55
80
70
60
60
80
90
(V) V
EBO
7
7
5
5
5
5
5
8
8
7
7
5
5
5
5
5
5
5
5
9
5
5
5
5
5
5
5
5
5
5
5
7
8
5
(V) P
C
12.5
12.5
36
36
36
36
36
15
15
20
15
30
30
30
40
40
40
40
25
30
30
30
30
30
25
10
40
40
25
40
40
30
40
40
(W)
Min
100
400
50
50
40
40
30
20
15
45
45
40
15
15
15
30
30
30
30
40
15
15
15
15
40
70
10
10
40
10
10
60
10
8
2-84
Discrete Power Products –
2000
Max
250
250
180
180
400
240
150
150
150
150
140
400
240
240
300
75
75
75
40
50
50
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
0.01
0.01
0.01
0.01
0.01
0.01
0.1
0.1
0.3
0.3
0.3
0.3
0.5
0.5
0.4
0.5
0.5
0.5
0.5
C
2
2
2
1
1
1
1
1
1
1
3
3
3
3
3
(A) @V
10
10
10
10
10
10
10
CE
1
5
5
1
1
4
–
4
4
4
5
4
4
1
5
5
5
1
4
4
4
4
2
4
4
5
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.2
0.2
0.2
0.1
0.3
0.4
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.75
0.75
0.3
0.3
0.5
0.5
0.6
0.8
0.8
0.3
0.7
0.7
0.7
0.5
0.7
0.7
0.7
0.7
0.8
1.2
1.2
1.2
1.2
1.5
1.2
2
1
1
1
1
1
1
1
1
V
CE (sat)
0.05
0.5
0.5
0.5
0.5
C
–
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
2
3
3
1
3
3
3
2
3
(A) @I
0.005
0.125
0.125
0.125
0.375
0.375
0.05
0.05
0.05
0.05
0.05
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.6
0.1
0.6
0.3
0.6
B
–
(A)