FMS6G15US60 Fairchild Semiconductor, FMS6G15US60 Datasheet - Page 96

• Manufacturer Part Number: FMS6G15US60
• Description: IGBT 600V 15A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS6G15US60

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.935nF @ 30V
• Power - Max: 73W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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Bipolar Power Transistors – Switching Transistors (Continued)
KSC3569
KSE13005F
FJPF3305
BUT11F
KSC5039F
FJPF13007
FJPF13009
BUT11AF
FJPF5021
FJPF5321
FJPF5027
KSC5027F
KSC5367F
TO-263(D
KSC5338DW
TO-3P NPN Configuration
FJPF3835
FJA13009
KSC2751
KSC5024
KSC5025
KKSC3552
TO-92 NPN Configuration
FJN3303
FJN13003
Products
2
PAK) NPN Configuration
V
CEO
400
400
400
400
400
400
400
450
500
500
800
800
800
450
120
400
400
500
500
800
400
400
(V) V
CBO
1000
1100
1100
1600
1000
1100
500
700
700
850
800
700
700
800
800
200
700
500
800
800
700
700
(V) V
EBO
12
12
7
9
9
9
7
9
9
9
7
7
7
7
8
9
7
7
7
7
9
9
(V) I
C
1.5
1.5
12
12
15
10
15
12
2
4
4
5
5
8
5
5
5
3
3
3
5
8
(A)
P
C
130
120
100
150
1.1
1.1
15
30
30
40
30
40
50
40
40
40
40
40
40
75
30
90
(W)
Min
120
20
10
19
10
15
15
10
10
12
15
15
15
15
10
–
–
8
8
8
8
9
Max
250
80
60
35
60
40
50
40
40
40
35
40
80
50
50
40
21
21
–
–
–
–
2-91
Discrete Power Products –
@I
h
FE
0.1
0.3
0.6
0.6
0.2
0.2
0.4
0.8
0.8
1.2
0.8
0.5
0.5
C
–
–
1
1
2
5
3
5
2
(A) @V
CE
–
–
5
5
5
5
5
5
5
5
5
5
3
1
4
5
5
5
5
5
2
2
(V)
Bold = New Products (introduced January 2003 or later)
Typ (V) Max (V) @I
0.35
0.3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.5
1.5
1.5
1.5
2.5
0.5
0.5
0.5
0.5
1
1
1
1
1
2
2
1
1
1
1
2
V
Bipolar Transistors and JFETs
CE
(sat)
0.25
0.5
2.5
2.5
1.5
1.5
0.8
0.5
0.5
10
C
1
1
3
2
5
3
3
3
5
4
6
6
(A) @I
0.025
0.08
0.1
0.2
0.2
0.6
0.5
0.4
0.5
0.6
0.6
0.3
0.3
0.3
0.8
1.2
1.2
0.1
0.1
B
1
1
2
(A)
t
STG
6.68
2.5
0.9
6.5
2.2
2.2
2.5
4
4
3
3
3
4
3
3
3
3
3
3
3
4
4
(µs) t
F
0.15
0.68
0.9
0.8
0.8
0.7
0.7
0.8
0.3
0.3
0.3
0.3
0.5
0.7
0.7
0.3
0.3
0.3
0.7
0.7
(µs)
1
4