FMG1G50US60L Fairchild Semiconductor, FMG1G50US60L Datasheet - Page 103
FMG1G50US60L
Manufacturer Part Number
FMG1G50US60L
Description
IGBT MOLDING 600V 50A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMS6G10US60.pdf
(214 pages)
Specifications of FMG1G50US60L
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 50A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.46nF @ 30V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG1G50US60L
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMG1G50US60L
Quantity:
55
- Current page: 103 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Small Signal Transistors – General Purpose Transistors
SOT-223 NPN Configuration
BCP68
FZT649
NZT6714
PZT3904
PZT2222A
NZT6715
BCP54
BCP55
NZT560A
NZT560
NZT651
NZT44H8
FZT3019
PZTA06
NZT6717
BCP56
PZTA42
FJT44
SOT-223 PNP Configuration
BCP69
FZT749
NZT6726
NZT6727
PZT3906
FZT790A
BCP51
PZT2907A
BCP52
NZT6728
NZT660A
NZT660
NZT749
NZT751
NZT45H8
Products
V
CEO
300
400
20
25
30
40
40
40
45
60
60
60
60
60
80
80
80
80
20
25
30
40
40
40
45
60
60
60
60
60
60
60
60
(V)
V
CBO
140
800
300
100
500
30
35
40
60
75
50
45
60
80
80
80
80
30
35
40
50
40
50
45
60
60
60
80
80
80
80
–
–
(V)
V
EBO
5
5
5
6
6
5
5
5
5
5
5
–
7
4
5
5
6
6
5
5
5
5
5
5
5
5
5
5
5
5
5
5
–
(V)
Max (A)
0.2
1.5
1.5
1.5
0.5
1.2
1.2
0.5
0.3
1.5
0.2
0.8
1.2
1.2
I
1
3
2
1
3
3
4
8
–
1
3
–
3
–
3
3
4
4
8
C
Min
100
100
100
250
100
100
100
100
300
100
250
100
85
50
50
40
40
75
60
50
50
40
40
50
85
50
50
40
40
50
75
75
60
2-98
Discrete Power Products –
Max
375
300
250
300
300
250
250
250
550
300
250
250
200
375
300
250
250
300
250
300
250
250
550
300
80
–
–
–
–
–
–
–
–
h
FE
@V
10
10
10
10
10
CE
1
2
1
1
1
2
2
2
2
2
1
1
1
2
1
2
1
1
1
2
2
2
1
2
2
2
2
1
(V) @I
1000
1000
1000
1000
1000
1000
C
500
150
150
150
500
500
500
100
250
150
500
150
150
150
250
500
500
500
500
10
30
10
10
10
2
1
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.45
0.25
0.35
0.75
0.55
0.5
0.6
0.5
0.3
0.5
0.5
0.5
0.4
0.5
0.2
0.5
0.5
0.5
0.6
0.5
0.5
0.4
0.3
0.5
1.6
0.5
0.5
0.5
0.5
0.5
1
1
1
@I
V
CE (sat)
3000
1000
1000
3000
3000
2000
8000
3000
1000
1000
1000
3000
3000
2000
2000
8000
C
500
500
500
150
100
250
500
500
500
500
250
50
20
50
50
1
1
(mA) @I
B
100
300
100
100
300
300
200
400
100
300
100
100
100
300
300
200
200
400
50
50
50
15
10
10
50
50
50
50
10
5
2
5
5
(mA)
Related parts for FMG1G50US60L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: