FMG1G50US60L Fairchild Semiconductor, FMG1G50US60L Datasheet - Page 74
FMG1G50US60L
Manufacturer Part Number
FMG1G50US60L
Description
IGBT MOLDING 600V 50A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMS6G10US60.pdf
(214 pages)
Specifications of FMG1G50US60L
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 50A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.46nF @ 30V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG1G50US60L
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMG1G50US60L
Quantity:
55
- Current page: 74 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
TO-3PF
FQAF85N06
FQAF65N06
FQAF90N08
FQAF58N08
FQAF44N08
FQAF44N10
IRFS150A
FQAF33N10
IRFS140A
FQAF33N10L
FQAF70N15
FQAF28N15
IRFS250B
FQAF19N20L
FQAF19N20
IRFS240B
FQAF40N25
FQAF34N25
FQAF16N25
IRFS244B
FQAF14N30
FQAF17N40
IRFS350A
FQAF11N40
IRFS340B
FQAF16N50
IRFS450B
FQAF9N50
IRFS440B
FQAF19N60
SSF17N60A
FQAF12N60
SSF7N60B
FQAF15N70
FQAF13N80
FQAF8N80
FQAF6N80
FQAF11N90
TO-3PF N-Channel
Products
Min. (V)
BV
100
100
100
100
100
150
150
200
200
200
200
250
250
250
250
300
400
400
400
400
500
500
500
500
600
600
600
600
700
800
800
800
900
60
60
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.016
0.016
0.024
0.034
0.039
0.052
0.052
0.052
0.028
0.085
0.085
10V
0.01
0.04
0.09
0.14
0.15
0.18
0.07
0.23
0.28
0.29
0.27
0.48
0.54
0.32
0.39
0.73
0.85
0.38
0.45
0.56
0.75
1.95
0.96
0.3
0.7
1.2
1.2
R
0.055@5V
DS(ON)
0.15@5V
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-69
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
135
101
128
GS
86
48
84
50
38
48
75
38
60
30
40
95
27
31
45
85
60
27
47
30
45
27
41
17
87
28
41
70
42
38
70
68
44
31
72
=5V
I
D
35.6
25.8
25.8
21.3
12.8
21.7
12.4
10.2
11.4
12.2
11.5
11.3
11.2
8.8
9.6
7.2
6.2
7.8
5.4
9.5
5.9
4.4
7.2
67
49
56
44
33
31
23
44
22
16
15
24
8
9
8
(A)
MOSFETs
P
D
100
100
100
130
102
108
100
100
110
120
100
100
120
120
107
120
86
85
83
85
83
72
83
90
85
85
73
85
73
90
92
90
85
96
90
85
86
90
(W)
Related parts for FMG1G50US60L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: