FMG1G50US60H Fairchild Semiconductor, FMG1G50US60H Datasheet - Page 118
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FMG1G50US60H
Manufacturer Part Number
FMG1G50US60H
Description
IGBT MOLDING 600V 50A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG1G50US60H.pdf
(214 pages)
Specifications of FMG1G50US60H
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 50A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.46nF @ 30V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG1G50US60H
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMG1G50US60H
Quantity:
55
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Small Signal Transistors – Hybrid Transistors
SC70 NPN Configuration
FFB3904
FFB2222A
BC847S
FFB5551
SC70 NPN/PNP Configuration
FFB2227A
FFB3946
SC70 PNP Configuration
FFB3906
BC857S
FFB2907A
SOIC NPN Configuration
MMPQ2222
MMPQ3904
MMPQ2222A
FTM3725
SOIC NPN/PNP Configuration
MMPQ6700
SOIC PNP Configuration
MMPQ3906
MMPQ2907
MMPQ2907A
SOT-563F PNP Configuration
FJYF2906
SuperSOT NPN Configuration
FMBA14
FMB3904
FMB2222A
FMB100
FMBA06
FMB5551
SuperSOT NPN/PNP Configuration
FMB2227A
FMB3946
Products
V
CEO
160
160
40
40
45
30
40
40
45
60
30
40
40
40
40
40
40
60
40
30
40
40
45
80
30
40
(V)
V
CBO
180
180
60
75
50
60
40
40
50
60
60
60
75
60
40
40
60
60
40
30
60
75
75
80
60
40
(V)
V
EBO
10
6
5
6
6
5
5
5
5
5
5
6
5
6
5
5
5
5
5
6
5
6
4
6
5
5
(V)
Max (A)
0.15
200
0.2
0.2
0.2
0.2
0.6
0.5
0.5
0.6
0.2
0.5
0.1
0.5
0.5
0.5
0.2
0.2
1.2
0.2
0.2
0.6
1.2
0.5
0.5
0.2
I
C
20000
Min
100
100
110
100
100
100
125
100
100
100
100
100
100
100
100
100
100
80
75
75
60
70
75
80
80
2-113
Discrete Power Products –
Max
300
630
300
300
300
300
300
300
450
250
300
250
630
180
300
300
300
300
–
–
–
–
–
–
–
–
h
FE
@V
Bold = New Products (introduced January 2003 or later)
10
10
10
10
10
10
10
10
10
CE
1
5
5
1
1
5
1
1
1
1
1
5
1
1
1
5
1
(V) @I
C
150
150
150
150
100
150
150
100
150
100
150
10
10
10
10
10
10
10
10
10
10
10
10
2
2
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.65
0.25
0.65
0.26
0.25
0.25
0.15
0.25
0.3
1.4
0.4
1.6
0.4
0.3
0.4
1.6
1.6
0.3
1.5
0.3
0.4
1.4
1
1
1
1
@I
V
CE (sat)
C
500
100
300
100
500
150
500
100
300
500
100
500
200
100
300
50
50
10
50
50
10
50
10
50
10
10
(mA) @I
B
0.1
50
30
50
15
50
10
30
50
50
20
10
30
5
5
5
1
5
5
5
1
5
1
5
1
1
(mA)
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