FMG1G50US60H Fairchild Semiconductor, FMG1G50US60H Datasheet - Page 122
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FMG1G50US60H
Manufacturer Part Number
FMG1G50US60H
Description
IGBT MOLDING 600V 50A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG1G50US60H.pdf
(214 pages)
Specifications of FMG1G50US60H
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 50A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.46nF @ 30V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG1G50US60H
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FMG1G50US60H
Quantity:
55
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JFETs
SOT-223 N-Channel
JFTJ105
SOT-23 N-Channel
KSK595H
MMBF5484
MMBFJ210
MMBF5485
MMBFJ309
MMBFJ211
MMBF5457
MMBF5486
MMBFJ212
MMBFJ310
MMBF5458
MMBF5459
MMBF4393
MMBF4392
MMBF4416
MMBF4391
MMBFJ113
MMBFJ112
MMBF4416A
MMBFJ111
MMBFJ201
MMBF4117
MMBF5103
MMBF4118
MMBFJ202
BSR58
MMBF4093
MMBF4119
BSR57
MMBF4092
MMBF4091
Products
BV
(V)
25
20
25
25
25
25
25
25
25
25
25
25
25
30
30
30
30
35
35
35
35
40
40
40
40
40
40
40
40
40
40
40
GDS
Dissipation
Power
(mW)
1000
100
225
225
225
350
225
350
225
225
350
350
350
350
350
225
350
350
350
225
350
350
225
350
225
350
250
350
225
250
350
350
P
D
Min (V)
4.5
0.3
0.5
2.5
0.5
0.5
2.5
0.5
0.3
0.6
1.2
0.8
0.8
–
–
1
1
2
4
2
1
2
2
4
1
3
1
1
2
2
2
5
Typ (V) Max (V) @ I
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
1.5
4.5
6.5
1.5
1.8
2.7
10
10
10
10
3
3
4
4
6
6
6
7
8
3
5
6
3
5
6
3
4
4
5
6
6
7
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
500
D
1
1
1
1
1
(µA) @ V
2-117
Discrete Power Products –
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.005
0.15
0.03
0.08
500
0.2
0.9
0.2
12
15
24
25
50
20
10
20
15
30
1
2
4
7
1
8
2
4
5
2
5
5
8
8
0.015
0.35
0.09
0.24
150
100
4.5
I
0.6
15
10
30
20
20
40
60
16
30
75
15
40
80
DSS
–
5
5
9
–
–
–
1
–
–
–
15
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
15
15
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.08
3.5
1.5
4.5
7.5
0.1
10
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3
4
6
1
4
7
8
2
GFS
0.21
0.25
0.33
5.5
7.5
12
20
12
12
18
15
–
–
6
7
5
8
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
(Ω)
100
100
60
30
50
30
60
80
50
30
3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0001
0.0001
0.0001
0.0002
0.0002
0.0002
D
0.003
0.001
0.001
0.001
(µA)
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
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