FMG2G75US60 Fairchild Semiconductor, FMG2G75US60 Datasheet - Page 3

• Manufacturer Part Number: FMG2G75US60
• Description: IGBT MOLDING 600V 75A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G75US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.056nF @ 30V
• Power - Max: 310W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Electrical Characteristics of DIODE
Thermal Characteristics
V
t
I
Q
R
R
R
Weight
rr
rr
Symbol
FM
θJC
θJC
θCS
rr
Symbol
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Case-to-Sink
Weight of Module
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Parameter
(Conductive grease applied)
Parameter
I
di / dt = 150 A/us
I
F
F
= 75A
= 75A
T
C
= 25°C unless otherwise noted
Test Conditions
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Typ.
0.05
--
--
--
Min.
--
--
--
--
--
--
--
--
Max.
190
0.4
0.9
Typ.
--
130
315
650
1.9
1.8
90
10
7
Max.
130
590
2.8
--
--
--
--
9
FMG2G75US60 Rev. A
Units
°C/W
°C/W
°C/W
g
Units
nC
ns
V
A