FMG2G75US60 Fairchild Semiconductor, FMG2G75US60 Datasheet - Page 3
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FMG2G75US60
Manufacturer Part Number
FMG2G75US60
Description
IGBT MOLDING 600V 75A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG2G75US60.pdf
(9 pages)
Specifications of FMG2G75US60
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
7.056nF @ 30V
Power - Max
310W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG2G75US60
Manufacturer:
FAIRCHILD
Quantity:
530
Part Number:
FMG2G75US60
Quantity:
55
©2001 Fairchild Semiconductor Corporation
Electrical Characteristics of DIODE
Thermal Characteristics
V
t
I
Q
R
R
R
Weight
rr
rr
Symbol
FM
θJC
θJC
θCS
rr
Symbol
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Case-to-Sink
Weight of Module
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Parameter
(Conductive grease applied)
Parameter
I
di / dt = 150 A/us
I
F
F
= 75A
= 75A
T
C
= 25°C unless otherwise noted
Test Conditions
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Typ.
0.05
--
--
--
Min.
--
--
--
--
--
--
--
--
Max.
190
0.4
0.9
Typ.
--
130
315
650
1.9
1.8
90
10
7
Max.
130
590
2.8
--
--
--
--
9
FMG2G75US60 Rev. A
Units
°C/W
°C/W
°C/W
g
Units
nC
ns
V
A