FMG2G75US60 Fairchild Semiconductor, FMG2G75US60 Datasheet - Page 7

• Manufacturer Part Number: FMG2G75US60
• Description: IGBT MOLDING 600V 75A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G75US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.056nF @ 30V
• Power - Max: 310W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Fig 19. Forward Characteristics
200
160
120
80
40
0
0
Common Cathode
V
T
T
GE
C
C
= 25
= 125
= 0V
1
Forward Voltage, V
2
F
[V]
3
4
Fig 20. Reverse Recovery Characteristics
20
10
5
2
0
10
20
Forward Current, I
30
40
50
F
Common Cathode
di/dt = 150A/
T
T
[A]
C
C
= 25
= 100
60
70
FMG2G75US60 Rev. A
T
I
rr
rr
80