FMG2G75US60 Fairchild Semiconductor, FMG2G75US60 Datasheet - Page 5
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FMG2G75US60
Manufacturer Part Number
FMG2G75US60
Description
IGBT MOLDING 600V 75A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG2G75US60.pdf
(9 pages)
Specifications of FMG2G75US60
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 75A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
7.056nF @ 30V
Power - Max
310W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG2G75US60
Manufacturer:
FAIRCHILD
Quantity:
530
Part Number:
FMG2G75US60
Quantity:
55
©2001 Fairchild Semiconductor Corporation
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Fig 7. Capacitance Characteristics
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
1000
100
100
10
0
20
1
Common Emitter
V
R
T
T
Common Emitter
V
I
T
T
C
Gate Resistance
C
C
C
C
CC
G
CC
Collector Current
= 75A
= 25
= 125
= 25
= 125
= 3.3
= 300V, V
= 300V, V
0
0
40
C
1
C
Ω
0
0
Cies
Coes
Cres
C
C
Collector - Emitter Voltage, V
GE
GE
= +/- 15V
= +/- 15V
60
Gate Resistance, R
Collector Current, I
80
10
100
C
g
[A]
[
Ω
Common Emitter
V
T
]
GE
C
10
CE
= 25
= 0V, f = 1MHz
120
[V]
Ton
Tr
Toff
140
Tf
1000
100
Fig 8. Turn-On Characteristics vs.
10000
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
10
1000
100
1
20
Common Emitter
V
I
T
T
1
C
CC
C
C
Common Emitter
V
R
T
T
= 75A
= 25
= 125
Common Emitter
V
I
T
T
CC
G
C
C
= 300V, V
C
C
C
CC
= 25
= 125
Collector Current
= 3.3
= 75A
= 25
= 125
= 300V, V
0
= 300V, V
C
0
C
0
40
C
Ω
0
0
C
C
0
C
GE
GE
= +/- 15V
GE
Gate Resistance, R
= +/- 15V
= +/- 15V
60
Collector Current, I
Gate Resistance, R
80
10
10
100
G
[
G
C
Ω
[
[A]
Ω
]
]
120
Ton
Toff
Toff
Tr
Tf
Tf
FMG2G75US60 Rev. A
Eon
Eoff
140