FMG2G75US60 Fairchild Semiconductor, FMG2G75US60 Datasheet - Page 5

• Manufacturer Part Number: FMG2G75US60
• Description: IGBT MOLDING 600V 75A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G75US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.056nF @ 30V
• Power - Max: 310W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
16000
14000
12000
10000
8000
6000
4000
2000
Fig 7. Capacitance Characteristics
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
1000
100
100
10
0
20
1
Common Emitter
V
R
T
T
Common Emitter
V
I
T
T
C
Gate Resistance
C
C
C
C
CC
G
CC
Collector Current
= 75A
= 25
= 125
= 25
= 125
= 3.3
= 300V, V
= 300V, V
0
0
40
C
1
C
Ω
0
0
Cies
Coes
Cres
C
C
Collector - Emitter Voltage, V
GE
GE
= +/- 15V
= +/- 15V
60
Gate Resistance, R
Collector Current, I
80
10
100
C
g
[A]
[
Ω
Common Emitter
V
T
]
GE
C
10
CE
= 25
= 0V, f = 1MHz
120
[V]
Ton
Tr
Toff
140
Tf
1000
100
Fig 8. Turn-On Characteristics vs.
10000
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
10
1000
100
1
20
Common Emitter
V
I
T
T
1
C
CC
C
C
Common Emitter
V
R
T
T
= 75A
= 25
= 125
Common Emitter
V
I
T
T
CC
G
C
C
= 300V, V
C
C
C
CC
= 25
= 125
Collector Current
= 3.3
= 75A
= 25
= 125
= 300V, V
0
= 300V, V
C
0
C
0
40
C
Ω
0
0
C
C
0
C
GE
GE
= +/- 15V
GE
Gate Resistance, R
= +/- 15V
= +/- 15V
60
Collector Current, I
Gate Resistance, R
80
10
10
100
G
[
G
C
Ω
[
[A]
Ω
]
]
120
Ton
Toff
Toff
Tr
Tf
Tf
FMG2G75US60 Rev. A
Eon
Eoff
140