FMG2G200US60 Fairchild Semiconductor, FMG2G200US60 Datasheet - Page 209
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FMG2G200US60
Manufacturer Part Number
FMG2G200US60
Description
IGBT MOLDING 600V 200A 7PM-HA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG1G50US60H.pdf
(214 pages)
Specifications of FMG2G200US60
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
250µA
Power - Max
695W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-HA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Input Capacitance (cies) @ Vce
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG2G200US60
Manufacturer:
FAIRCHILD
Quantity:
530
Part Number:
FMG2G200US60
Quantity:
55
Company:
Part Number:
FMG2G200US60E
Manufacturer:
COSEL
Quantity:
387
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Discrete
Discrete IGBT (SMPS I)
HGT G
12
(Continued)
N 60
A
4
D
D: Integral Reverse Diode
S: Surface Mount
C: Current Sense
V: Voltage Clamping
1: First Generation
2: Second Generation
3: Third Generation
4: SMPS
N: NPT
A: 100ns
B: 200ns
C: 500ns
i.e., (600, 1200)
N-Channel or P-Channel
Rating at T
Rating at T
D: 3 Lead TO-251/TO-252
1S: 3 Lead TO-262/TO-263
P: 3 Lead TO-220
G: 3 Lead TO-247
1Y: 3-Lead TO-264
Options
Max Fall Time At T
Voltage Breakdown/10
Polarity
SMPS Rated Current
Gen. 1, 2, 3 Continuous Current
Package
Fairchild
C
C
= +75°C 100kHz Operation
= +110°C
8-16
J
= +150°C
E: ≤ 1µs
F: ≤ 2µs
G: ≤ 5µs
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