FMG2G150US60E Fairchild Semiconductor, FMG2G150US60E Datasheet - Page 4
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FMG2G150US60E
Manufacturer Part Number
FMG2G150US60E
Description
IGBT MOLDING 600V 150A 7PM-GA
Manufacturer
Fairchild Semiconductor
Datasheet
1.FMG2G150US60E.pdf
(9 pages)
Specifications of FMG2G150US60E
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
12.84nF @ 30V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FMG2G150US60E
Manufacturer:
FAIRCHILD
Quantity:
292
Part Number:
FMG2G150US60E
Quantity:
55
©2002 Fairchild Semiconductor Corporation
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
320
280
240
200
160
120
80
40
20
16
12
0
5
4
3
2
1
0
8
4
0
0
0
0
Common Emitter
T
Common Emitter
V
Common Emitter
T
C
GE
Temperature at Variant Current Level
C
= 25
= 25
= 15V
Collector - Emitter Voltage, V
30
4
Gate - Emitter Voltage, V
2
I
Case Temperature, T
C
= 80A
20V
60
8
15V
150A
4
12V
300A
90
12
C
[ ]
GE
GE
CE
[V]
6
[V]
120
16
V
GE
I
= 10V
C
300A
150A
= 80A
150
20
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
180
160
140
120
100
300
250
200
150
100
50
80
60
40
20
20
16
12
0
0
8
4
0
0.1
0.3
0
Duty cycle : 50%
T
Power Dissipation = 200W
Common Emitter
V
T
T
C
Common Emitter
T
GE
C
C
C
= 100
= 25
= 125
= 125
= 15V
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
1
I
C
1
= 80A
Frequency [Khz]
8
V
Load Current : peak of square wave
CC
= 300V
10
150A
12
300A
GE
GE
CE
100
[V]
[V]
16
10
FMG2G150US60E Rev. A
1000
20
20