FMG2G150US60E Fairchild Semiconductor, FMG2G150US60E Datasheet - Page 7

• Manufacturer Part Number: FMG2G150US60E
• Description: IGBT MOLDING 600V 150A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G150US60E

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.84nF @ 30V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2002 Fairchild Semiconductor Corporation
Fig 19. Forward Characteristics
400
350
300
250
200
150
100
50
0
0
Common Cathode
V
T
T
C
C
GE
= 25
= 125
= 0V
1
Forward Voltage, V
2
F
[V]
3
4
Fig 20. Reverse Recovery Characteristics
30
10
5
0
Common Cathode
di/dt = 300A/
T
T
C
C
I
T
T
I
rr
= 25
= 100
rr
rr
rr
20
40
Forward Current, I
60
80
100
F
[A]
120
FMG2G150US60E Rev. A
140
160