APTM120SK56T1G Microsemi Power Products Group, APTM120SK56T1G Datasheet - Page 2

• Manufacturer Part Number: APTM120SK56T1G
• Description: MOSFET N-CH 1200V 18A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120SK56T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 672 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 7736pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dynamic Characteristics
Chopper diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Thermal and package characteristics
Symbol Characteristic
Torque
R
V
V
V
T
T
R
T
I
I
C
C
C
Q
Q
I
DS(on)
Wt
Q
V
Q
GS(th)
T
DSS
GSS
T
d(off)
T
T
d(on)
RRM
t
ISOL
RM
I
STG
thJC
oss
rr
iss
rss
F
gs
gd
C
g
r
f
F
rr
J
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
All ratings @ T
Test Conditions
V
V
f = 1MHz
V
V
I
Resistive switching @ 25°C
V
V
I
R
j
Test Conditions
V
V
V
V
V
D
D
www.microsemi.com
G
= 25°C unless otherwise specified
GS
DS
GS
Bus
GS
Bus
= 14A
= 14A
DS
GS
GS
GS
GS
= 2.2Ω
= 0V
= 25V
= 10V
= 15V
= 600V
= 800V
=1200V
= 0V
= 10V, I
= V
= ±30 V
Test Conditions
V
I
I
I
I
V
di/dt =200A/µs
F
F
F
F
R
R
= 30A
= 60A
= 30A
= 30A
=1200V
DS
= 800V
, I
D
D
To heatsink
= 2.5mA
= 14A
APTM120SK56T1G
Transistor
Diode
T
T
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
M4
Min
1200
2500
Min
Min
Min
-40
-40
-40
2.5
3
7736
1700
Typ
140
715
300
170
Typ
Typ
300
380
360
92
48
Typ
560
50
50
31
2.6
3.2
1.8
30
4
Max
±100
Max
0.32
Max
Max
150
125
100
100
500
1.2
4.7
100
500
672
3.1
80
5
°C/W
Unit
Unit
Unit
Unit
N.m
mΩ
µA
nC
µA
nA
nC
pF
ns
°C
ns
V
A
V
V
V
g
2 – 5