APTM120SK56T1G Microsemi Power Products Group, APTM120SK56T1G Datasheet - Page 4

• Manufacturer Part Number: APTM120SK56T1G
• Description: MOSFET N-CH 1200V 18A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120SK56T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 672 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 7736pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

12
10
40
30
20
10
2.5
1.5
0.5
8
6
4
2
0
0
3
2
1
0
0
0
25
I
T
Normalized R
D
V
I
Low Voltage Output Characteristics
J
D
=14A
V
V
=25°C
GS
=14A
Gate Charge vs Gate to Source
40
GS
DS
=10V
T
=10V
, Drain to Source Voltage (V)
J
50
, Junction Temperature (°C)
80 120 160 200 240 280 320
5
Gate Charge (nC)
DS(on)
75
V
DS
=600V
10
vs. Temperature
V
DS
100
=240V
15
V
125
DS
T
T
J
=960V
J
=125°C
=25°C
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150
20
APTM120SK56T1G
10000
30
25
20
15
10
20
16
12
1000
5
0
8
4
0
100
10
0
0
Capacitance vs Drain to Source Voltage
V
250µs pulse test @ <
0.5 duty cycle
0
T
Low Voltage Output Characteristics
DS
J
V
=125°C
V
> I
GS
DS
5
1
Transfert Characteristics
V
D(on)
, Gate to Source Voltage (V)
, Drain to Source Voltage (V)
DS
V
, Drain to Source Voltage (V)
GS
xR
50
=6, 7, 8 & 9V
10
DS(on)
2
MAX
T
J
=125°C
15
3
T
100
J
=25°C
4
20
150
5
25
Crss
Coss
4.5V
Ciss
5V
6
200
30
4 – 5