APTM120SK56T1G Microsemi Power Products Group, APTM120SK56T1G Datasheet - Page 5

• Manufacturer Part Number: APTM120SK56T1G
• Description: MOSFET N-CH 1200V 18A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120SK56T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 672 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 7736pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Typical Diode Performance Curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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200
160
120
1.4
1.2
0.8
0.6
0.4
0.2
80
60
40
20
80
40
0.00001
4
3
2
1
0
0
0
1
0
0.0
0
1
T
V
Forward Current vs Forward Voltage
J
Capacitance vs. Reverse Voltage
R
=125°C
=800V
0.05
V
0.7
0.9
0.3
0.5
0.1
200
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
F
QRR vs. Current Rate Charge
, Anode to Cathode Voltage (V)
V
1.0
R
, Reverse Voltage (V)
400
10
-di
0.0001
T
J
=125°C
F
/dt (A/µs)
600
2.0
800
100
T
J
=25°C
45 A
3.0
1000 1200
0.001
15 A
30 A
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Rectangular Pulse Duration (Seconds)
1000
4.0
Single Pulse
0.01
Max. Average Forward Current vs. Case Temp.
50
40
30
20
10
500
400
300
200
100
30
25
20
15
10
0
APTM120SK56T1G
5
0
25
0
0
0
T
V
0.1
J
R
Trr vs. Current Rate of Charge
=125°C
=800V
IRRM vs. Current Rate of Charge
50
200
200
45 A
Case Temperature (ºC)
75
400
400
-di
-di
F
F
/dt (A/µs)
/dt (A/µs)
100
600
600
1
Duty Cycle = 0.5
125
800
800 1000 1200
T
J
=175°C
T
V
J
R
=125°C
=800V
1000 1200
150
30 A
45 A
30 A
15 A
15 A
10
175
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