APTM120SK56T1G Microsemi Power Products Group, APTM120SK56T1G Datasheet - Page 3

• Manufacturer Part Number: APTM120SK56T1G
• Description: MOSFET N-CH 1200V 18A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120SK56T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 672 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 7736pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Temperature sensor NTC
Symbol Characteristic
SP1 Package outline
Typical Mosfet Performance Curve
B
R
25/85
25
Resistance @ 25°C
T
25
= 298.15 K
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.00001
0
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
0.9
0.05
0.7
0.5
0.1
0.3
(dimensions in mm)
R
T
=
0.0001
exp
(see application note APT0406 on www.microsemi.com for more information).
⎡
⎢
⎣
B
25
/
85
R
⎛
⎜ ⎜
⎝
25
T
1
25
rectangular Pulse Duration (Seconds)
−
0.001
T
1
⎞
⎟ ⎟
⎠
www.microsemi.com
⎤
⎥
⎦
T: Thermistor temperature
R
T
: Thermistor value at T
Single P ulse
0.01
APTM120SK56T1G
0.1
Min
3952
1
Typ
50
Max
10
Unit
kΩ
K
3 – 5