APTM10SKM02G Microsemi Power Products Group, APTM10SKM02G Datasheet - Page 2

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APTM10SKM02G

Manufacturer Part Number
APTM10SKM02G
Description
MOSFET N-CH 100V 495A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10SKM02G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 200A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
495A
Vgs(th) (max) @ Id
4V @ 10mA
Gate Charge (qg) @ Vgs
1360nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM10SKM02G
Manufacturer:
Microsemi Corporation
Quantity:
332
Dynamic Characteristics
Chopper diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
T
V
T
I
I
C
C
C
Q
Q
E
E
E
E
I
DS(on)
GS(th)
Q
V
Q
DSS
d(off)
GSS
d(on)
T
T
RRM
RM
I
t
oss
iss
rss
on
off
on
off
rr
gd
F
gs
rr
g
r
f
F
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
All ratings @ T
j
Test Conditions
V
V
f = 1MHz
V
V
I
Inductive switching @ 125°C
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
Test Conditions
V
V
V
V
V
D
D
D
D
= 25°C unless otherwise specified
GS
GS
GS
DS
GS
Bus
GS
Bus
G
GS
GS
GS
GS
GS
= 400A
= 400A
= 400A, R
= 400A, R
= 1.25Ω
= 0V,V
= 0V,V
www.microsemi.com
= 0V
= 25V
= 10V
= 15V
= 15V, V
= 15V, V
= 10V, I
= V
= ±30 V, V
= 50V
= 66V
Test Conditions
V
I
I
I
I
V
di/dt =800A/µs
F
F
F
F
R
R
= 400A
= 800A
= 400A
= 400A
=200V
DS
= 133V
, I
DS
DS
D
G
G
D
= 100V
= 80V
Bus
Bus
= 10mA
=1.25Ω
= 1.25Ω
= 200A
DS
= 66V
= 66V
= 0V
T
T
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
APTM10SKM02G
Min
200
Min
Min
2
3360
1360
15.7
2.41
2.43
2.56
2.25
Typ
400
110
800
Typ
240
720
160
240
500
160
1.4
0.9
Typ
5.9
2.2
60
40
1
1000
Max
2000
±400
Max
Max
750
400
2.5
4
Unit
Unit
Unit
mΩ
µA
nC
µA
nA
nF
nC
mJ
mJ
A
ns
V
V
ns
V
2 - 6