APTM10SKM02G Microsemi Power Products Group, APTM10SKM02G Datasheet - Page 4

no-image

APTM10SKM02G

Manufacturer Part Number
APTM10SKM02G
Description
MOSFET N-CH 100V 495A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10SKM02G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 200A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
495A
Vgs(th) (max) @ Id
4V @ 10mA
Gate Charge (qg) @ Vgs
1360nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM10SKM02G
Manufacturer:
Microsemi Corporation
Quantity:
332
Typical Performance Curve
0.12
0.08
0.06
0.04
0.02
2500
2000
1500
1000
1.2
1.1
0.9
0.8
0.1
500
0.00001
1
0
0
Low Voltage Output Characteristics
0
0
Normalized to
V
0.9
0.7
0.5
0.3
0.1
0.05
GS
V
=10V @ 200A
DS
4
100
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Drain to Source Voltage (V)
R
I
DS(on)
D
V
, Drain Current (A)
8
GS
=15V, 10V & 9V
0.0001
200
vs Drain Current
12
8V
16
300
7V
20
V
V
400
GS
GS
0.001
=10V
=20V
24
6V
rectangular Pulse Duration (Seconds)
500
28
www.microsemi.com
0.01
Single Pulse
480
400
320
240
160
500
400
300
200
100
80
0
0
DC Drain Current vs Case Temperature
25
0
APTM10SKM02G
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
> I
GS
1
T
Transfert Characteristics
D
50
, Gate to Source Voltage (V)
C
(on)xR
, Case Temperature (°C)
2
T
J
DS
=125°C
T
75
(on)MAX
J
=25°C
3
1
100
4
5
T
125
J
=-55°C
6
10
150
7
4 - 6