APTM10SKM02G Microsemi Power Products Group, APTM10SKM02G Datasheet - Page 5

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APTM10SKM02G

Manufacturer Part Number
APTM10SKM02G
Description
MOSFET N-CH 100V 495A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10SKM02G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 200A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
495A
Vgs(th) (max) @ Id
4V @ 10mA
Gate Charge (qg) @ Vgs
1360nC @ 10V
Input Capacitance (ciss) @ Vds
40000pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM10SKM02G
Manufacturer:
Microsemi Corporation
Quantity:
332
100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
Threshold Voltage vs Temperature
-50 -25
0
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
Coss
Ciss
Crss
50
www.microsemi.com
10000
1000
100
16
14
12
10
10
Gate Charge vs Gate to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
0
APTM10SKM02G
-50 -25
1
Single pulse
T
T
limited by
R
I
T
D
DSon
J
C
J
=400A
V
I
V
=150°C
=25°C
D
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
GS
= 200A
T
DS
400
J
=10V
, Junction Temperature (°C)
, Drain to Source Voltage (V)
0
Gate Charge (nC)
800
25
V
DS
=50V
10
50
1200
V
75 100 125 150
DS
=20V
1600
V
DS
10ms
=80V
1ms
100µs
2000
100
5 - 6