FSB52006S Fairchild Semiconductor, FSB52006S Datasheet - Page 4

• Manufacturer Part Number: FSB52006S
• Description: MODULE SPM SMART PWR SPM23-BA
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: FETr

Specifications of FSB52006S

• Configuration: 3 Phase
• Current: 2.6A
• Voltage: 60V
• Voltage - Isolation: 1500Vrms
• Package / Case: SPM23BA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FSB52006S Rev. A
Recommended Operating Conditions
Note:
(1) It is recommended the bootstrap diode D
(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
(3) RC coupling(R
(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C
Note:
Symbol
Micom
V
V
dard CMOS or LSTTL outptus.
and C
Attach the thermocouple on top of the heatsink-side of SPM (between SPM and heatsink if applied) to get the correct temperature measurement.
IN(OFF)
f
t
V
IN(ON)
V
V
PWM
dead
T
CC
PN
BS
C
3
should have good high-frequency characteristics to absorb high-frequency ripple current.
15-V Line
10μF
Supply Voltage
Control Supply Voltage
High-side Bias Voltage
Input ON Threshold Voltage
Input OFF Threshold Voltage
Blanking Time for Preventing
Arm-short
PWM Switching Frequency
Case Temperature
5
R
Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters
and C
5
R
1
These values depend on PWM
C
C
5
5
) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM is compatible with stan-
2
Parameter
D
1
control algorithm
C
1
3.80mm
3.80mm
1
* Example of bootstrap paramters:
to have soft and fast recovery characteristics with 100-V rating
C
R
COM
1
1
VCC
HIN
LIN
Figure 3. Case Temperature Measurement
= C
= 56Ω, R
One-Leg Diagram of SPM
2
= 1μF ceramic capacitor,
VB
HO
VS
LO
Applied between P and N
Applied between V
Applied between V
Applied between IN and COM
V
T
T
2
J
J
CC
= 20Ω
≤ 125°C
≤ 125°C
R
14.50mm
14.50mm
MOSFET
MOSFET
=V
2
BS
=13.5 ~ 16.5V, T
Conditions
CC
B
and V
4
P
N
and COM
Inverter
Output
R
J
S
3
≤ 125°C
V
DC
C
3
Case Temperature(Tc)
Case Temperature(Tc)
Detecting Point
Detecting Point
Open
HIN
0
0
1
1
Open
LIN
0
1
0
1
Min.
13.5
13.5
3.0
1.0
-20
0
-
-
Forbidden
Output
V
Value
Z
0
Z
DC
Typ.
45
15
15
15
-
-
-
-
High-side FRFET On
Low-side FRFET On
Both FRFET Off
Max.
Same as (0, 0)
Shoot-through
16.5
16.5
V
100
0.6
55
CC
-
-
www.fairchildsemi.com
Note
Units
kHz
μs
°C
V
V
V
V
V
1
, C
2