FDME1023PZT Fairchild Semiconductor, FDME1023PZT Datasheet - Page 4

• Manufacturer Part Number: FDME1023PZT
• Description: MOSFET P-CH 20V 2.6A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME1023PZT

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 142 mOhm @ 2.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 405pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 95 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 7 S
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDME1023PZT Rev.C1
Typical Characteristics
0.01
0.1
4.5
3.0
1.5
0.0
10
1000
Figure 7.
1
100
0.1
0.3
10
0
10
1
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
-4
I
J
A
θ
D
Figure 9.
JA
= MAX RATED
= 25
= -2.3 A
= 195
-V
o
C
Gate Charge Characteristics
DS
o
C/W
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
DS(on)
Q
Forward Bias Safe
g
2
, GATE CHARGE (nC)
10
1
-3
V
V
DD
DD
= -8 V
Figure 11. Single Pulse Maximum Power Dissipation
= -12 V
T
J
V
DD
= 25 °C unless otherwise noted
4
= -10 V
10
10
-2
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
t, PULSE WIDTH (s)
60
6
10
-1
4
1000
10
10
10
10
10
10
10
10
10
100
1
10
Figure 10. Gate Leakage
0.1
-1
-2
-3
-4
-5
-6
-7
-8
-9
0
Figure 8.
V
f = 1 MHz
V
DS
GS
= 0 V
Gate to Source Voltage
= 0 V
-V
-V
3
DS
to Source Voltage
GS ,
, DRAIN TO SOURCE VOLTAGE (V)
10
Capacitance vs Drain
GATE TO SOURCE VOLTAGE (V)
T
J
= 125
6
1
o
C
SINGLE PULSE
R
T
A
θ
JA
= 25
T
= 195
J
100
Current vs
= 25
o
9
C
o
o
C/W
C
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C
C
10
C
iss
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