FDME1024NZT Fairchild Semiconductor, FDME1024NZT Datasheet

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... Thermal Resistance, Junction to Ambient (Single Operation) θJA Package Marking and Ordering Information Device Marking Device 4T FDME1024NZT ©2010 Fairchild Semiconductor Corporation FDME1024NZT Rev.C1 ® MOSFET General Description = 3.4 A This device is designed specifically as a single package solution D for dual switching requirement in cellular handset and other = 2 ...

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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. FDME1024NZT Rev. °C unless otherwise noted J Test Conditions = 250 μ ...

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... Junction Temperature 6 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDME1024NZT Rev. °C unless otherwise noted J 3 2.5 V 2.5 = 1.8 V 2.0 = 1.5 V 1.5 μ s 1.0 0.5 1.0 1.5 300 250 200 ...

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... LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 195 C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 100 Figure 11. Single Pulse Maximum Power Dissipation FDME1024NZT Rev. °C unless otherwise noted J 500 = 8 V 100 μ 100 100 ...

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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 R θ JA 0.005 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve FDME1024NZT Rev. °C unless otherwise noted 195 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK θJA θ 100 ...

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... Dimensional Outline and Pad Layout FDME1024NZT Rev.C1 6 www.fairchildsemi.com ...

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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDME1024NZT Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...