FDME1024NZT Fairchild Semiconductor, FDME1024NZT Datasheet - Page 3

• Manufacturer Part Number: FDME1024NZT
• Description: MOSFET N-CH 20V 3.8A 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME1024NZT

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 55 mOhms
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 9 S
• Gate Charge Qg: 3 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDME1024NZT Rev.C1
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On- Resistance
6
4
2
0
6
4
2
0
Figure 1.
0.0
0.0
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
GS
= 3.4 A
-50
= 4.5 V
vs Junction Temperature
V
DS
V
V
T
-25
DS
GS
J
On-Region Characteristics
0.5
,
= 5 V
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
0.5
0
T
J
= 150
25
μ
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
V
V
s
1.0
GS
GS
GS
GS
GS
= 1.8 V
o
= 4.5 V
= 3 V
= 2.5 V
= 1.5 V
50
C
T
J
= 25 °C unless otherwise noted
T
1.0
75
J
= -55
T
J
1.5
= 25
o
100 125 150
C )
o
C
o
C
μ
s
1.5
2.0
3
0.001
0.01
300
250
200
150
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
50
10
0
1
Figure 2.
Figure 4.
0.0
1.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
= 0 V
V
1.5
GS
0.2
SD
T
J
= 1.5 V
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
= 150
On-Resistance vs Gate to
GS
Source Voltage
Source to Drain Diode
,
2.0
GATE TO SOURCE VOLTAGE (V)
V
I
o
0.4
D
C
GS
2
,
DRAIN CURRENT (A)
= 1.8 V
2.5
V
μ
GS
0.6
s
T
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
J
= 2.5 V
T
= 125
= 25
3.0
J
= -55
o
C
o
0.8
I
T
D
C
4
J
o
= 3.4 A
3.5
C
= 25
V
GS
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o
= 3 V
V
C
GS
1.0
4.0
= 4.5 V
μ
s
1.2
4.5
6