FDD050N03B Fairchild Semiconductor, FDD050N03B Datasheet - Page 2

• Manufacturer Part Number: FDD050N03B
• Description: MOSFET N-CH 30V 90A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD050N03B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2875pF @ 15V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD050N03B Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
6. When mounted on a 1 in
BV
ΔBV
I
I
V
R
g
C
C
C
Q
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gs2
gd
rr
SD
Device Marking
DSS
Symbol
J
FDD050N03B
≤ 50A, di/dt ≤ 200A/μs, V
DSS
AS
= 12A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
2
= 27V, R
pad of 2 oz copper
DD
≤ BV
FDD050N03B
G
= 25Ω, Starting T
DSS
Device
Parameter
, Starting T
J
T
= 25°C
J
C
= 25°C
= 25
o
C unless otherwise noted
Package
D-PAK
I
I
V
V
V
V
dI
V
V
V
V
V
f = 1MHz
V
V
V
V
D
D
DS
GS
DD
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
F
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 24V, V
= 0V, I
= ±16V, V
= 5V, I
= 15V, V
= 15V, I
= 10V, R
= 0V, I
= V
= 10V, I
= 4.5V, I
= 15V, I
= 10V
DS
Test Conditions
, I
D
SD
2
SD
D
Reel Size
D
D
D
= 50A
D
GS
GS
GS
GEN
330mm
= 50A
= 50A
= 50A
= 25A
= 50A
DS
= 250μA
= 15A
= 0V
= 0V
= 0V, T
= 0V
= 4.7Ω
C
= 25
(Note 4,5)
(Note 4,5)
o
(Note 4)
(Note 4)
C
o
C
Tape Width
16mm
Min.
1.25
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2160
Typ.
14.5
805
169
2.0
3.7
5.2
7.8
3.8
4.6
4.5
4.5
33
19
13
85
33
30
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
2875
1070
130
360
90*
2500
1.3
3.0
5.0
8.1
43
39
18
70
19
1
-
-
-
-
-
-
-
-
mV/
Units
mΩ
nC
nC
nC
nC
μA
pF
pF
pF
nC
nA
ns
ns
ns
ns
ns
V
A
A
V
V
S
o
C