FDD050N03B Fairchild Semiconductor, FDD050N03B Datasheet - Page 4

• Manufacturer Part Number: FDD050N03B
• Description: MOSFET N-CH 30V 90A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD050N03B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2875pF @ 15V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD050N03B Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
400
100
0.1
Figure 9. Maximum Safe Operating Area
10
1.2
1.1
1.0
0.9
0.8
1
-100
0.1
Operation in This Area
is Limited by R
-50
vs. Temperature
T
V
J
*Notes:
DS
, Junction Temperature
1. T
2. T
3. Single Pulse
, Drain-Source Voltage [V]
0
C
J
= 175
1
DS(on)
= 25
0.01
0.1
4
1
o
10
o
C
C
50
-5
Single pulse
0.05
0.02
0.01
0.2
0.1
0.5
100
10ms
1ms
100ms
DC
10
10
*Notes:
Figure 11. Transient Thermal Response Curve
-4
100
[
1. V
2. I
o
C
μ
150
D
]
GS
s
= 10mA
= 0V
10
Rectangular Pulse Duration [sec]
200
-3
50
(Continued)
10
-2
4
10
Figure 8. On-Resistance Variation
-1
Figure 10. Maximum Drain Current
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
-100
0
25
*Notes:
P
Limited by Package
1. Z
2. Duty Factor, D= t
3. T
R
DM
1
θ
JC
θ
JM
-50
JC
50
= 2.3
- T
vs. Temperature
(t) = 2.9
T
T
vs. Case Temperature
J
C
, Junction Temperature
C
t
, Case Temperature
1
= P
t
2
o
C/W
75
o
DM
0
10
C/W Max.
* Z
1
θ
/t
JC
2
100
50
(t)
10
2
100
125
[
o
*Notes:
C
[
1. V
2. I
]
o
C
D
150
]
150
GS
= 25A
www.fairchildsemi.com
= 10V
200
175