FDMS7672AS Fairchild Semiconductor, FDMS7672AS Datasheet - Page 4

• Manufacturer Part Number: FDMS7672AS
• Description: MOSFET N-CH 30V SYNCFET POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7672AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2820pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 m Ohms
• Forward Transconductance Gfs (max / Min): 97 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 42 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7672AS Rev.C
Typical Characteristics
0.01
300
100
0.1
30
10
10
10
1
8
6
4
2
0
Figure 7.
0.01
1
0.01
0
THIS AREA IS
LIMITED BY r
I
Figure 9.
D
Figure 11. Forward Bias Safe
= 18 A
5
V
Switching Capability
DS
0.1
Gate Charge Characteristics
SINGLE PULSE
T
R
T
0.1
t
AV
, DRAIN to SOURCE VOLTAGE (V)
J
A
θ
Operating Area
JA
10
DS(on)
= MAX RATED
Unclamped Inductive
= 25
, TIME IN AVALANCHE (ms)
Q
= 125
g
, GATE CHARGE (nC)
o
V
C
DD
15
o
T
C/W
= 10 V
J
1
= 125
1
T
J
20
= 25
T
o
C
J
V
= 25 °C unless otherwise noted
o
DD
C
T
10
J
= 15 V
25
= 100
10
V
DD
o
C
1 s
100
1 ms
10 ms
100 ms
10 s
DC
30
= 20 V
µ
100200
s
100
35
4
3000
1000
3000
1000
100
100
0.5
90
60
30
10
Figure 10.
50
0
1
10
0.1
25
Figure 12.
-4
f = 1 MHz
V
Limited by Package
SINGLE PULSE
R
T
Figure 8.
GS
Current vs Case Temperature
A
θ
JA
V
= 25
= 0 V
GS
10
= 125
-3
= 10 V
V
o
50
C
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
T
C/W
c
10
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
-2
R
t, PULSE WIDTH (sec)
θ
JC
75
1
= 2.7
10
-1
o
C/W
1
100
V
GS
= 4.5 V
10
o
C )
V
C
C
C
GS
125
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10
= 10 V
100
1000
150
30