FDMS7660AS Fairchild Semiconductor, FDMS7660AS Datasheet - Page 3

• Manufacturer Part Number: FDMS7660AS
• Description: MOSFET N-CH 30V PWRSTAGE POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7660AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 6120pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 m Ohms
• Forward Transconductance Gfs (max / Min): 455 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 42 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7660AS Rev.C
Typical Characteristics
150
120
150
120
1.6
1.4
1.2
1.0
0.8
0.6
90
60
30
90
60
30
Figure 3. Normalized On- Resistance
0
0
Figure 1.
0.0
-75
1.5
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
D
-50
GS
= 25 A
vs Junction Temperature
= 5 V
= 10 V
2.0
V
T
V
-25
J
DS
GS
On-Region Characteristics
,
0.5
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
GS
GS
GS
0
T
J
= 10 V
= 4.5 V
= 4 V
= 125
2.5
25
µ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
1.0
o
C
50
T
3.0
J
= 25 °C unless otherwise noted
75
T
J
= -55
1.5
o
100 125 150
T
C )
3.5
V
J
V
GS
= 25
GS
o
C
= 3.5 V
= 3 V
µ
o
s
C
2.0
4.0
3
0.001
0.01
200
100
0.1
10
6
5
4
3
2
1
0
8
6
4
2
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
T
GS
J
V
= 0 V
= 125
0.2
SD
= 3 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
30
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
On-Resistance vs Gate to
GS
I
Source Voltage
4
o
D
Source to Drain Diode
,
C
,
I
GATE TO SOURCE VOLTAGE (V)
D
DRAIN CURRENT (A)
= 25 A
0.4
T
J
V
= -55
60
GS
T
J
V
= 3.5 V
= 25
GS
o
C
0.6
6
= 4.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
T
C
J
T
= 125
90
J
µ
s
= 25
0.8
o
o
C
C
8
120
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V
1.0
V
GS
GS
= 10 V
= 4 V
µ
s
150
1.2
10