FDMS7660AS Fairchild Semiconductor, FDMS7660AS Datasheet - Page 4

• Manufacturer Part Number: FDMS7660AS
• Description: MOSFET N-CH 30V PWRSTAGE POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7660AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 6120pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 m Ohms
• Forward Transconductance Gfs (max / Min): 455 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 42 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7660AS Rev.C
Typical Characteristics
0.01
200
100
0.1
40
10
10
10
Figure 7.
8
6
4
2
0
1
0.01
1
0.01
0
I
THIS AREA IS
LIMITED BY r
D
Figure 9.
Figure 11. Forward Bias Safe
= 25 A
10
V
Switching Capability
SINGLE PULSE
T
R
T
V
DD
0.1
J
A
DS
Gate Charge Characteristics
θ
0.1
JA
= MAX RATED
t
= 25
AV
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
= 10 V
Unclamped Inductive
= 125
20
DS(on)
, TIME IN AVALANCHE (ms)
Q
g
o
C
, GATE CHARGE (nC)
V
o
C/W
DD
30
T
= 15 V
J
1
1
= 125
T
J
= 25
40
V
T
o
DD
C
J
= 25 °C unless otherwise noted
o
= 20 V
C
10
T
10
50
J
= 100
o
60
100 ms
1 s
10 s
C
1 ms
10 ms
DC
100
100
300
70
200
4
1000
8000
1000
160
120
100
100
0.6
80
40
10
60
Figure 10.
0
1
10
0.1
25
Figure 12.
-3
f = 1 MHz
V
SINGLE PULSE
R
T
Figure 8.
GS
Current vs Case Temperature
A
θ
JA
Limited by Package
= 25
= 0 V
= 125
10
V
o
-2
50
DS
C
Power Dissipation
Maximum Continuous Drain
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
o
C/W
t, PULSE WIDTH (sec)
C
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
10
-1
75
V
1
GS
= 4.5 V
1
R
100
V
θ
JC
GS
10
= 1.5
= 10 V
o
C )
o
C/W
125
V
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10
100
GS
C
= 10 V
C
C
oss
rss
iss
1000
150
30