FDPF6N60ZUT Fairchild Semiconductor, FDPF6N60ZUT Datasheet - Page 4

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FDPF6N60ZUT

Manufacturer Part Number
FDPF6N60ZUT
Description
MOSFET N-CH 600V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF6N60ZUT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2.25A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
865pF @ 25V
Power - Max
33.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF6N60ZUT
Manufacturer:
Fairchi/ON
Quantity:
17 419
FDP6N60ZU / FDPF6N60ZUT Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.16
1.12
1.08
1.04
1.00
0.96
0.92
0.88
-100
6
4
2
0
25
Limited by package
-50
vs. Temperature
vs. Case Temperature
50
T
T
J
C
, Junction Temperature [
, Case Temperature
0
0.01
Figure 10. Transient Thermal Response Curve - FDPF6N60ZUT
75
0.1
5
1
10
50
Single pulse
-5
0.02
0.01
0.05
0.5
0.2
0.1
100
100
10
[
o
C
*Notes:
-4
]
1. V
2. I
o
125
C]
150
D
GS
= 250
= 0V
10
μ
-3
Rectangular Pulse Duration [sec]
A
200
150
(Continued)
10
-2
0.01
4
0.1
30
10
10
1
Figure 8. Maximum Safe Operating Area
-1
1
Operation in This Area
is Limited by R
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
1
θ
JM
V
JC
DS
(t) = 3.7
- T
- FDPF6N60ZUT
, Drain-Source Voltage [V]
C
10
t
DS(on)
1
= P
t
2
o
DM
*Notes:
C/W Max.
10
1. T
2. T
3. Single Pulse
* Z
1
C
J
θ
/t
JC
= 150
2
= 25
(t)
o
C
o
100
C
10
2
DC
10ms
1ms
100
μ
s
20
www.fairchildsemi.com
μ
1000
s

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