FDPF8N60ZUT Fairchild Semiconductor, FDPF8N60ZUT Datasheet

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FDPF8N60ZUT

Manufacturer Part Number
FDPF8N60ZUT
Description
MOSFET N-CH 600V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF8N60ZUT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.35 Ohm @ 3.25A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
1265pF @ 25V
Power - Max
34.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
CHD Technology Co.,Limited CHD Technology Co.,Limited
Part Number:
FDPF8N60ZUT
Manufacturer:
ON
Quantity:
186 000
Price:
Company:
CHD Technology Co.,Limited CHD Technology Co.,Limited
Part Number:
FDPF8N60ZUT
Manufacturer:
ON
Quantity:
186 000
Price:
Company:
CHD Technology Co.,Limited CHD Technology Co.,Limited
Part Number:
FDPF8N60ZUT
Manufacturer:
ON
Quantity:
186 000
Price:
©2009 Fairchild Semiconductor Corporation
FDP8N60ZU / FDPF8N60ZUT Rev. A
*Drain current limited by maximum junction temperature
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP8N60ZU / FDPF8N60ZUT
N-Channel MOSFET, FRFET
600V, 6.5A, 1.35Ω
Features
• R
• Low gate charge ( Typ. 20nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 1.15mΩ ( Typ.) @ V
G
( Typ. 10pF)
D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
S
TO-220
FDP Series
GS
= 10V, I
D
T
C
= 3.25A
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
= 25
C
= 25
o
C unless otherwise noted*
o
G
C)
D
S
C
C
= 25
= 100
o
C
1
o
C)
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
TO-220F
FDPF Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP8N60ZU
FDP8N60ZU
G
G
1.05
0.95
62.5
135
6.5
3.9
0.5
26
-55 to +150
13.5
600
±30
420
300
6.5
20
FDPF8N60ZUT
FDPF8N60ZUT
D
D
S
S
62.5
34.5
0.28
6.5*
3.9*
26*
3.6
UniFET
-
www.fairchildsemi.com
April 2009
switching
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDPF8N60ZUT Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDP8N60ZU / FDPF8N60ZUT Rev. A Description = 10V 3.25A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 20mH 6.5A 50V 25Ω, Starting ≤ 6.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Essentially Independent of Operating Temperature Typical Characteristics FDP8N60ZU / FDPF8N60ZUT Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250μ 0V, T ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = shorted) C oss = rss = 1500 oss C iss 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP8N60ZU / FDPF8N60ZUT Rev. A Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 200 100 10 = 20V GS o *Note: T ...

Page 4

... T , Junction Temperature [ J Figure 9. Maximum Drain Current vs. Case Temperature 8 6 Limited by package Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF8N60ZUT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP8N60ZU / FDPF8N60ZUT Rev. A (Continued) Figure 8. Maximum Safe Operating Area ...

Page 5

... FDP8N60ZU / FDPF8N60ZUT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP8N60ZU / FDPF8N60ZUT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 FDP8N60ZU / FDPF8N60ZUT Rev. A TO-220 ±0.20 (8.70) ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP8N60ZU / FDPF8N60ZUT Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8N60ZU / FDPF8N60ZUT Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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