FDPF8N60ZUT Fairchild Semiconductor, FDPF8N60ZUT Datasheet - Page 3

• Manufacturer Part Number: FDPF8N60ZUT
• Description: MOSFET N-CH 600V TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF8N60ZUT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.35 Ohm @ 3.25A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1265pF @ 25V
• Power - Max: 34.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8N60ZU / FDPF8N60ZUT Rev. A
Typical Performance Characteristics
2000
1500
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
0.1
1.5
1.4
1.3
1.2
1.1
1.0
500
20
10
Figure 1. On-Region Characteristics
1
0.1
0
0
0.1
V
GS
C
C
=
C
oss
rss
iss
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Drain Current and Gate Voltage
V
V
DS
DS
3
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
I
V
D
GS
, Drain Current [A]
= 10V
1
1
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
6
V
GS
*Notes:
1. 250
2. T
= 20V
*Note: T
C
= 25
μ
s Pulse Test
9
*Note:
o
C
C
1. V
2. f = 1MHz
10
= 25
10
GS
o
= 0V
C
20
12
30
3
200
100
0.1
10
20
10
10
8
6
4
2
0
Figure 2. Transfer Characteristics
1
Figure 4. Body Diode Forward Voltage
1
Figure 6. Gate Charge Characteristics
0
2
0
*Notes:
1. V
2. 250
V
DS
SD
μ
= 20V
, Body Diode Forward Voltage [V]
s Pulse Test
V
Q
5
Variation vs. Source Current
1
and Temperature
GS
g
, Total Gate Charge [nC]
150
,Gate-Source Voltage[V]
150
4
V
V
V
o
o
C
DS
DS
DS
C
= 150V
= 300V
= 480V
10
25
2
o
C
*Notes:
1. V
2. 250
25
o
*Note: I
GS
C
6
μ
= 0V
s Pulse Test
15
3
D
= 6.5A
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20
8
4