FDPF10N50UT Fairchild Semiconductor, FDPF10N50UT Datasheet

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FDPF10N50UT

Manufacturer Part Number
FDPF10N50UT
Description
MOSFET N-CH 500V 8A TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF10N50UT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1130pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FDP10N50U / FDPF10N50UT Rev. A-1
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDP10N50U / FDPF10N50UT
N-Channel MOSFET
500V, 8A, 1.05
Features
• R
• Low Gate Charge ( Typ. 18nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
JC
JA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.85 ( Typ.) @ V
( Typ. 9pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
TO-220
FDP Series
= 10V, I
D
= 4A
T
C
Parameter
Parameter
= 25
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
= 25
o
C unless otherwise noted*
o
C)
G
D
S
C
C
= 25
= 100
o
C
1
o
C)
o
Description
These N-Channel enhancement mode power field effect transis-
tors are p roduced using Fa irchild’s proprietary, planar stripe,
DMOS technology.
This advan ce technology has been especially tailored to mini-
mize on-state r esistance, prov ide sup erior switching per for-
mance, and wit hstand high ener gy pulse in th e avalanche an d
commutation mode. T hese devices are w ell su ited fo r high ef fi-
cient switching mode power supplies and active power factor
correction.
C)
TO-220F
FDPF Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP10N50U
FDP10N50U
62.5
125
4.8
1.0
1.0
32
8
G
-55 to +150
12.5
500
±30
320
300
20
8
FDPF10N50UT
FDPF10N50UT
S
D
0.33
62.5
4.8*
November 2009
32*
3.0
42
UniFET
8*
www.fairchildsemi.com
Units
W/
Units
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDPF10N50UT Summary of contents

Page 1

... R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2008 Fairchild Semiconductor Corporation FDP10N50U / FDPF10N50UT Rev. A-1 Description = 4A These N-Channel enhancement mode power field effect transis- D tors are p roduced using Fa irchild’s proprietary, planar stripe, DMOS technology. This advan ce technology has been especially tailored to mini- ...

Page 2

... Starting 8A, di/dt 200A/s, V BV , Starting DSS 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP10N50U / FDPF10N50UT Rev. A unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss = rss = C gd 1500 C oss C iss 1000 500 C rss 0 0 Drain-Source Voltage [V] DS FDP10N50U / FDPF10N50UT Rev. A-1 Figure 2. Transfer Characteristics *Notes: 1. 250 s Pulse Test  0 Figure 4. Body Diode Forward Voltage 20V GS o *Note: T ...

Page 4

... T , Junction Temperature J Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature C Figure 10. Transient Thermal Response Curve - FDPF10N50UT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP10N50U / FDPF10N50UT Rev. A-1 (Continued) Figure 8. Maximum Safe Operating Area 0.1 *Notes: 1 ...

Page 5

... FDP10N50U / FDPF10N50UT Rev. A-1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP10N50U / FDPF10N50UT Rev. A-1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP10N50U / FDPF10N50UT Rev. A-1 TO-220 7 www.fairchildsemi.com ...

Page 8

... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP10N50U / FDPF10N50UT Rev. A-1 TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP10N50U / FDPF10N50UT Rev. A-1 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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