FDPF10N50UT Fairchild Semiconductor, FDPF10N50UT Datasheet - Page 4

• Manufacturer Part Number: FDPF10N50UT
• Description: MOSFET N-CH 500V 8A TO-220F-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF10N50UT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.05 Ohm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1130pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP10N50U / FDPF10N50UT Rev. A-1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
1.16
1.12
1.08
1.04
1.00
0.96
0.92
0.88
Figure 9. Maximum Drain Current
-100
10
8
6
4
2
0
25
-50
vs. Temperature
vs. Case Temperature
50
T
T
J
, Junction Temperature
C
, Case Temperature
0
0.005
0.01
Figure 10. Transient Thermal Response Curve - FDPF10N50UT
75
0.1
5
1
10
50
-5
Single pulse
0.02
0.01
0.05
0.5
0.1
0.2
100
100
10
[
o
*Notes:
C
-4
[
1. V
2. I
o
]
125
C
150
D
]
GS
= 250
= 0V
10

A
200
-3
Rectangular Pulse Duration [sec]
150
(Continued)
10
-2
0.01
4
0.1
50
10
10
1
Figure 8. Maximum Safe Operating Area
1
-1
Operation in This Area
is Limited by R
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
1

JM
V
JC
DS
- FDPF10N50UT
(t) = 3.0
- T
, Drain-Source Voltage [V]
C
10
DS(on)
t
= P
1
t
2
o
DM
C/W Max.
*Notes:
10
1. T
2. T
3. Single Pulse
* Z
1

/t
C
J
JC
2
= 150
= 25
(t)
DC
o
100
C
o
10ms
10
C
2
1ms
100

s
10

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s