FDPF12N60NZ Fairchild Semiconductor, FDPF12N60NZ Datasheet

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FDPF12N60NZ

Manufacturer Part Number
FDPF12N60NZ
Description
MOSFET N-CH 600V TO-220F-3
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF12N60NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1676pF @ 25V
Power - Max
39W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDPF12N60NZ
Manufacturer:
CHAMPION
Quantity:
1 670
Price:
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP12N60NZ / FDPF12N60NZ
N-Channel MOSFET
600V, 12A, 0.65
Features
• R
• Low gate charge ( Typ. 26nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD Improved capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
Symbol
Symbol
, T
STG
DS(on)
rss
G D S
= 0.53 ( Typ.)@ V
( Typ. 12pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
FDP Series
GS
= 10V, I
D
= 6A
T
C
Parameter
Parameter
= 25
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
= 25
o
C unless otherwise noted*
G
o
D
C)
S
C
C
= 25
= 100
o
C
1
o
C)
TO-220F
FDPF Series
(potted)
o
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
Description
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP12N60NZ FDPF12N60NZ
FDP12N60NZ FDPF12N60NZ
0.52
62.5
0.5
240
7.2
2.0
12
48
UniFET-II
-55 to +150
600
±30
565
300
September 2010
24
10
12
62.5
3.2
7.2*
12*
48*
0.3
39
-
www.fairchildsemi.com
TM
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C

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FDPF12N60NZ Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP12N60NZ / FDPF12N60NZ Rev. A Description = 6A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DOMS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Starting 12A, di/dt 200A/s, V  Starting DSS 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP12N60NZ / FDPF12N60NZ Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250 ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 5000 1000 ( C iss = shorted 100 C oss = rss = Note 1MHz 10 0 Drain-Source Voltage [V] DS FDP12N60NZ / FDPF12N60NZ Rev. A Figure 2. Transfer Characteristics 100  1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 V = 20V Note : Figure 6. Gate Charge Characteristics ...

Page 4

... Limited by R DS(on) * Notes : 0 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs Case Temperature Case Temperature C FDP12N60NZ / FDPF12N60NZ Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250uA 120 160 - Figure 10. Maximum Safe Operating Area 100   ...

Page 5

... Single pulse 0.001 - 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 -5 10 FDP12N60NZ / FDPF12N60NZ Rev. A Figure 12. Transient Thermal Response Curve -FDPF12N60NZ - Rectangular Pulse Duration [sec] Figure 13. Transient Thermal Response Curve -FDP12N60NZ - ...

Page 6

... FDP12N60NZ / FDPF12N60NZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP12N60NZ / FDPF12N60NZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Mechanical Dimensions FDP12N60NZ / FDPF12N60NZ Rev. A TO-220 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP12N60NZ / FDPF12N60NZ Rev. A (Continued) TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP12N60NZ / FDPF12N60NZ Rev. A F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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