BGA 751L7 E6327 Infineon Technologies, BGA 751L7 E6327 Datasheet - Page 12

• Manufacturer Part Number: BGA 751L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Single Band Low Noise Amplifierr

Specifications of BGA 751L7 E6327

• Mounting Style: SMD/SMT
• Operating Frequency: 800 MHz to 900 MHz
• Noise Figure: 1.05 dB
• Operating Supply Voltage: 2.6 V to 3 V
• Supply Current: 3.3 mA, 0.5 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Package / Case: TSLP-7-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA751L7E6327XT

Noise Figure
2.12
V
Power Gain
Data Sheet
CC
= 2.8 V,
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.86
1
19
18
17
16
15
14
13
−40
Measured Performance Low Band (Band V) High Gain Mode vs. Temperature
V
|S
NF
GS
21
−20
| = f (
= 2.8 V,
= f (
0.87
T
Frequency [GHz]
f
0
A
)
)
V
EN
20
0.88
T
A
= 2.8 V,
Measured Performance Low Band (Band V) High Gain Mode vs. Temperature
[°C]
40
0.89
60
f
= 880 MHz,
80
0.9
100
BGA751L7 - Low Power Single-Band UMTS LNA
R
REF
Input Compression
12
Supply Current
= n/c
−10
−12
−14
−2
−4
−6
−8
0.86
0
4.5
3.5
2.5
−40
5
4
3
2
−20
I
CC
0.87
P1dB
= f (
Frequency [GHz]
0
= f (
T
A
20
)
0.88
T
Electrical Characteristics
A
f
)
[°C]
40
0.89
60
V3.2, 2009-05-27
80
0.9
100