BGA 751L7 E6327 Infineon Technologies, BGA 751L7 E6327 Datasheet - Page 5

• Manufacturer Part Number: BGA 751L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Single Band Low Noise Amplifierr

Specifications of BGA 751L7 E6327

• Mounting Style: SMD/SMT
• Operating Frequency: 800 MHz to 900 MHz
• Noise Figure: 1.05 dB
• Operating Supply Voltage: 2.6 V to 3 V
• Supply Current: 3.3 mA, 0.5 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Package / Case: TSLP-7-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA751L7E6327XT

1
The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is
based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1
leadless green package. Because the matching is off chip, the 800 MHz path can be easily converted into a 900
MHz path by optimizing the input and output matching network. This document specifies the electrical parameters,
pinout, application circuit and packaging of the chip.
Features
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Figure 1
Type
BGA751L7
Data Sheet
Gain: 16 / -8 dB in high / low gain mode
Noise figure: 1.05 dB in high gain mode
Supply current: 3.3 / 0.5 mA in high / low gain mode
Standby mode (< 2 µA typ.)
Output internally matched to 50 Ω
Inputs pre-matched to 50 Ω
2kV HBM ESD protection
Low external component count
Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm)
Pb-free (RoHS compliant) package
Description
Block diagram of single-band LNA
Package
TSLP-7-1
BGA751L7 - Low Power Single-Band UMTS LNA
B5
Marking
5
TSLP-7-1 package
Chip
T1533
V3.2, 2009-05-27
Description