BGA 751L7 E6327 Infineon Technologies, BGA 751L7 E6327 Datasheet - Page 8

• Manufacturer Part Number: BGA 751L7 E6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Single Band Low Noise Amplifierr

Specifications of BGA 751L7 E6327

• Mounting Style: SMD/SMT
• Operating Frequency: 800 MHz to 900 MHz
• Noise Figure: 1.05 dB
• Operating Supply Voltage: 2.6 V to 3 V
• Supply Current: 3.3 mA, 0.5 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Package / Case: TSLP-7-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA751L7E6327XT

2.7
Supply current and Power gain high gain mode versus reference resistor R
independent of reference resistor).
Note: In order to achieve higher gain an external reference resistor can be soldered between RREF (Pin 5) and
Supply Current
V
2.8
Current consumption of logic inputs VEN, VGS
Logic currents
V
Data Sheet
CC
CC
= 2.8 V
= 2.8 V
ground (see
6.5
5.5
4.5
3.5
2.5
7
6
5
4
3
2
6
4
2
0
0
Supply current and Power gain characteristics;
Logic Signal Characteristics;
I
1
I
EN
0.5
CC
Figure 2 on page
= f (
= f (
V
1
R
EN
R
REF
V
REF
)
EN
1.5
)
[k ]
[V]
10
2
16).
2.5
100
3
Supply current and Power gain characteristics; T
BGA751L7 - Low Power Single-Band UMTS LNA
T
A
Power Gain
V
Logic currents
V
= 25 °C
CC
CC
8
= 2.8 V
= 2.8 V
17.5
16.5
15.5
18
17
16
15
|S
6
4
2
0
0
21
10
I
| = f (
GS
0.5
= f (
T
REF
R
A
REF
V
= 25 °C
R
GS
(low gain mode supply current is
1
)
REF
)
V
100
[k ]
GS
Electrical Characteristics
1.5
[V]
2
V3.2, 2009-05-27
2.5
1000
A
3
= 25 °C