BSM50GP120 Infineon Technologies, BSM50GP120 Datasheet - Page 11
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSM50GP120
Manufacturer Part Number
BSM50GP120
Description
IGBT Modules 1200V 50A PIM
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GP120.pdf
(12 pages)
Specifications of BSM50GP120
Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
360 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
80A
Gate To Emitter Voltage (max)
±20V
Pin Count
24
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM50GP120
Manufacturer:
NICHICON
Quantity:
30 000
Company:
Part Number:
BSM50GP120
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Part Number:
BSM50GP120
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM50GP120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM50GP120
Quantity:
50
IGBT-Module
IGBT-Modules
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
Technische Information / Technical Information
Schaltplan/ Circuit diagram
Gehäuseabmessungen/ Package outlines
1
2
3
21
23
14
22
24
BSM50GP120
20
13
7
11(11)
19
18
4
12
17
16
11
5
15
6
10
8
NTC
9
DB-PIM-10.xls